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Kada, Wataru; Sato, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Grilj, V.*; Skukan, N.*; Makino, Takahiro; Koka, Masashi; Jak
i
, M.*; Oshima, Takeshi; et al.
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.70 - 73, 2012/12
Thin film CVD diamond detector is now under investigation for the utilization as a transmission detector for ionized particle in single-ion-hit by replacing materials of the beam extraction window in a microbeam line of the AVF cyclotron at JAEA/Takasaki. In this research, a spectroscopy-grade 50 
m thick-film Single Crystalline (SC) CVD diamond detector with size of 4.6 mm 
4.6 mm was characterized using Ion Beam Induced Charge (IBIC) and Transient Ion Beam Induced Current (TIBIC) systems. The detector was irradiated with 1-3 MeV H
and 15 MeV O
microbeams. Significant decrease of pulse height of IBIC signals was observed at 15 MeV O irradiation, however, this peak degradation easily recovered in a short time by release of bias voltages. This temporal degradation effect was enhanced in areas damaged by previous ion irradiation. Therefore, the temporal peak degradation seems to be caused by the polarization effect due to charge captured by defects in diamond or/and at the surface.
Yuri, Yosuke; Yuyama, Takahiro; Ishizaka, Tomohisa; Ishibori, Ikuo; Okumura, Susumu
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.97 - 100, 2012/12
Deki, Manato; Makino, Takahiro; Tomita, Takuro*; Hashimoto, Shuichi*; Kojima, Kazutoshi*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.78 - 81, 2012/12
Metal-Oxide-Semiconductor (MOS) capacitors fabricated on Silicon Carbide (SiC) under applied biases were irradiated with heavy ions. The relationship between critical electric field (E
) and Linear Energy Transfer (LET) was investigated. As a results of 9 MeV-Ni, 18 MeV-Ni, Kr-322 MeV and 454 MeV-Xeirradiation (the values of LET are 14.6, 23.8, 42.2 and 73.2 MeV cm
/mg, respectively), reciprocal value of E increases with increasing LET. The similar relationship was also reported Si MOS capacitors. However, the increase in SiC MOS capacitors is smaller than that in Si ones because the generation energy of one electron-hole pair for SiC is larger than that for Si.
Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.66 - 69, 2012/12
Silicon carbide (SiC) is regarded as a promising candidate for electronic devices requiring high radiation tolerance (rad-hard devices). Some results indicate that SiC has superior radiation tolerance from the point of view of total ionizing dose effects (TIDs). For the development of rad-hard SiC devices, it is necessary to understand the response of their performance when dense charge is generated in them by an incident ion, resulting in single event effects (SEEs). Therefore, we have measured the bias dependence of the collected charge distribution induced by heavy ions in 4H-SiC-schottky barrier diodes (SBDs) fabricated in thick epi-layer to reveal SEE mechanisms. As a result, anomalous collected charge peaks (2nd peaks) induced by the heavy ions were observed for the first time. The new process of the SEB was observed in the case of incident ions on thick epi-layer of SiC-SBDs.
Sato, Shinichiro; Kevin, B.*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.44 - 47, 2012/12
Degradation behavior of a-Si/a-SiGe/a-SiGe triple-junction solar cells irradiated with various energy protons are investigated 
. It is clarified that the degradation due to proton irradiation is scaled by a unit of displacement damaged dose and thus the proton-induced degradation is mainly caused by the displacement damage effect. The performance recoveries immediately after irradiation are also investigated and it is clarified that all the parameters recover significantly at room temperature. In particular, the remarkable recovery is observed in the short-circuit current. This is thought to be due to recovery of the carrier lifetime, which is based on annealing of radiation defects.
Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sugai, Mitsunobu*; Sato, Shinichiro; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.48 - 51, 2012/12
Recently a new method was proposed that estimating the current-voltage (IV) characteristics of subcells in a multi-junction (MJ) solar cell by using electroluminescence (EL). The estimated IV characteristics of electron-irradiated MJ solar cell from the IV curve obtained from each subcell agreed well with the actual dark IV (DIV) and light IV (LIV) characteristics, except for series resistance (
) and shunt resistance (
). of a MJ cells and of subcells can be also clarified through measurement LIV characteristics using color bias lights and circuit simulation program. In this work, we applied this method to InGaP/GaAs dual-junction (2J) solar cells irradiated with electrons. As a result, we succeeded to predict the degradation curve of maximum power of the 2J solar cell where the current-limiting subcell changes from InGaP to GaAs subcell using degradation curve of each parameter.
Iwamoto, Naoya; Johnson, B. C.; Oshima, Takeshi; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.62 - 65, 2012/12
Makihara, Akiko*; Yokose, Tamotsu*; Tsuchiya, Yoshihisa*; Tani, Koichi*; Morimura, Tadaaki*; Abe, Hiroshi; Shindo, Hiroyuki*; Ebihara, Tsukasa*; Maru, Akifumi*; Morikawa, Koichi*; et al.
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.119 - 122, 2012/12
no abstracts in English
Ogura, Shunta*; Komiyama, Takahiro*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.127 - 129, 2012/12
We have investigated the transient current in a SOI p
n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.
Hoshino, Eijiro*; Kobayashi, Daisuke*; Makino, Takahiro; Oshima, Takeshi; Hirose, Kazuyuki*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.130 - 133, 2012/12
Single event effects on phase locked loops (PLLs) are experimentally investigated. Test chips of the PLLs are fabricated in a 0.2-m fully-depleted silicon-on-insulator technology. The PLL architecture is designed in conjunction with hardening techniques such as the triple modular redundancy and a stacked transistor design approach. A heavy-ion beam test confirms that the hardened PLL exhibits higher radiation tolerance than non-hardened one for 7.5-MeV Ne irradiation: The accelerated ions have the linear energy transfer of 7.3 MeV/cm
/mg in Si.
Hazama, Masatoshi*; Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio*; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; et al.
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.115 - 118, 2012/12
Onoda, Shinobu; Abe, Hiroshi; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.93 - 96, 2012/12
Maeda, Takahiro*; Kakimi, Yukitaka*; Akashi, Kenji*; Oshima, Takeshi; Onoda, Shinobu
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.27 - 28, 2012/12
Kuboyama, Satoshi*; Mizuta, Eiichi*; Ikeda, Naomi*; Abe, Hiroshi; Oshima, Takeshi; Tamura, Takashi*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.138 - 141, 2012/12
no abstracts in English